PART |
Description |
Maker |
CHA2294-99F_00 CHA2294 CHA2294-99F/00 |
35-40GHz Low Noise, Variable Gain Amplifier 35-40GHz Low Noise, Variable Gain Amplifier 35 - 40GHz的低噪声,可变增益放大器
|
United Monolithic Semic... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
|
CHA2097A CHA2097A99F_00 |
20-40GHz Variable Gain Amplifier
|
UMS[United Monolithic Semiconductors]
|
CHA3694-QDG-15 |
31-40GHz Variable Gain Amplifier
|
United Monolithic Semic...
|
CHA2294-99F_00 CHA229407 |
35-40GHz Low Noise, Variable Gain Amplifier
|
United Monolithic Semiconductors
|
CHA2098B CHA2098B99F_00 CHA2098B99F/00 |
20-40GHz High Gain Buffer Amplifier 20 - 40GHz的高增益缓冲放大
|
United Monolithic Semiconductors GmbH
|
CHA2094B99F_00 CHA2094B CHA2094B99F/00 |
36-40GHz Low Noise High Gain Amplifier 36 - 40GHz的低噪声高增益放大器
|
United Monolithic Semic... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
|
LT1991 LT1991HMS-PBF LT1991HMS-TRPBF LT1991IDD-PBF |
Precision, 100µA Gain Selectable Amplifier; Package: DFN; No of Pins: 10; Temperature Range: -40°C to 85°C OP-AMP, 250 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10 Precision, 100µA Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C OP-AMP, 200 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10 Precision, 100µA Gain Selectable Amplifier; Package: MSOP; No of Pins: 10; Temperature Range: -40° to 125°C OP-AMP, 160 uV OFFSET-MAX, 0.56 MHz BAND WIDTH, PDSO10 Precision, 100μA Gain Selectable Amplifi er Precision, 100渭A Gain Selectable Amplifi er Precision, 100楼矛A Gain Selectable Amplifi er
|
Linear Technology, Corp. http://
|
C10508-01-15 |
Variable gain, stable detection even at high gain
|
Hamamatsu Corporation
|
EL4451 |
Wideband Variable-Gain Amplifier/ Gain of 2
|
Elantec Semiconductor
|
EL4452C EL4452CN EL4452CS |
Wideband Variable-Gain Amplifier with Gain of 10
|
ELANTEC[Elantec Semiconductor]
|
HMC996LP4E |
Variable Gain Amplifier
|
Hittite
|